|Title||Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism|
|Publication Type||Journal Article|
|Year of Publication||2016|
|Authors||Shim, J, Kim, HSeok, Shim, YSu, Kang, D-H, Park, H-Y, Lee, J, Jeon, J, Jung, SJun, Song, YJae, Jung, W-S, Lee, J, Park, S, Kim, J, Lee, S, Kim, Y-H, Park, J-H|
|Pagination||5293 - +|
|Keywords||bilayer graphene, contacts, electronic-structure, field-effect transistor, heterostructures, high-mobility, integrated-circuits, memory devices, on/off-ratio, single-layer mos2|
A WSe2-based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 x 10(7) at 180 K (3 x 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.
|Short Title||Adv. Mater.|