|Title||Enhancing Magnetic Ordering in Cr-Doped Bi2Se3 Using High-T-C Ferrimagnetic Insulator|
|Publication Type||Journal Article|
|Year of Publication||2015|
|Authors||Liu, W, He, L, Xu, Y, Murata, K, Onbasli, MC, Lang, M, Maltby, NJ, Li, S, Wang, X, Ross, CA, Bencok, P, van der Laan, G, Zhang, R, Wang, KL|
|Pagination||764 - 769|
We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2-xCrxSe3, via the proximity effect using a high-T-C ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced T-C of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.