The effect of annealing at 1500 degrees C on migration and release of ion implanted silver in CVD silicon carbide

TitleThe effect of annealing at 1500 degrees C on migration and release of ion implanted silver in CVD silicon carbide
Publication TypeJournal Article
Year of Publication2006
AuthorsMacLean, HJ, Ballinger, R, Kolaya, LE, Simonson, SA, Lewis, N, Hanson, ME
JournalJournal of Nuclear Materials
Volume357
Issue1-3
Pagination31 - 47
Date Published2006/10/15/
Abstract

The transport of silver in CVD beta-SiC has been studied using ion implantation. Silver ions were implanted in beta-SiC using the ATLAS accelerator facility at the Argonne National Laboratory. Ion beams with energies of 93 and 161 MeV were used to achieve deposition with peak concentrations of approximately 26 wt% at depths of approximately 9 and