Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

TitleDirect MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe
Publication TypeJournal Article
Year of Publication2016
AuthorsWang, B, Wang, C, Kohen, DA, Made, RI, Lee, KEng Kian, Kim, T, Milakovich, T, Fitzgerald, EA, Yoon, SFatt, Michel, J
JournalJournal of Crystal Growth
Volume441
Pagination78 - 83
Date Published2016/05/01/
ISBN Number0022-0248
Keywordsge, Light emitting diodes, Metalorganic vapor phase epitaxy, Semiconducting gallium compounds, Semiconducting III-V materials, Semiconducting silicon compounds
Abstract

GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH3 pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4 x 10(7)/cm(2) to 1.2 x 10(5)/cm(2). The physics is suggested to be an optimization between complete As-termination and AsH3 etching effect of SiGe surface. (C) 2016 Elsevier B.V. All rights reserved.

Short TitleJ. Cryst. Growth