|Title||Diffusion-Mediated Synthesis of MoS2/WS2 Lateral Heterostructures|
|Publication Type||Journal Article|
|Year of Publication||2016|
|Authors||Bogaert, K, Liu, S, Chesin, J, Titow, D, Gradecak, S, Garaj, S|
|Pagination||5129 - 5134|
|Keywords||alloys, atomic layers, chemical vapor deposition, diffusion, epitaxial-growth, heterojunctions, heterostructures, inplane heterostructures, monolayers, nanosheets, optical-properties, Transition metal dichalcogenides, transition-metal dichalcogenides, tunable band-gap|
Controlled growth of two-dimensional transition metal dichalcogenide (TMD) lateral heterostructures would enable on demand tuning of electronic and optoelectronic properties in this new class of materials. Prior to this work, compositional modulations in lateral TMD heterostructures have been considered to depend solely on the growth chronology. We show that in-plane diffusion can play a significant role in the chemical vapor deposition of MoS2/WS2 lateral heterostructures leading to a variety of nontrivial structures whose composition does not necessarily follow the growth order. Optical, structural, and compositional studies of TMD crystals captured at different growth temperatures and in different diffusion stages suggest that compositional mixing versus segregation are favored at high and low growth temperatures, respectively. The observed diffusion mechanism will expand the realm of possible lateral heterostructures, particularly ones that cannot be synthesized using traditional methods.
|Short Title||Nano Lett.|