|Title||Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode|
|Publication Type||Journal Article|
|Year of Publication||2013|
|Authors||Yang, S-U, Choi, S-H, Lee, J, Kim, J, Jung, W-S, Yu, H-Y, Roh, Y, Park, J-H|
|Journal||Journal of Alloys and Compounds|
|Pagination||228 - 230|
One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 degrees C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. On-current density (0.02 A/cm(2)) and on/off-current ratio (4 x 10(2)) were obtained in the junction annealed at 300 degrees C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples. (C) 2013 Elsevier B. V. All rights reserved.