Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate

TitleDeep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate
Publication TypeJournal Article
Year of Publication2016
AuthorsNguyen, XSang, Goh, XLong, Zhang, L, Zhang, Z, Arehart, AR, Ringel, SA, Fitzgerald, EA, Chua, SJin
JournalJapanese Journal of Applied Physics
Volume55
Issue6
Pagination060306
Date Published2016/06//
ISBN Number0021-4922
Keywordscenters, light-emitting-diodes, luminescence, molecular-beam epitaxy, n-type gan, quantum-well, silicon, transient spectroscopy
Abstract

Deep level traps present in GaN LED grown on 8 in. Si substrate were revealed by deep level transient spectroscopy (DLTS). One electron trap located at E-C - 0.7 eV was revealed in the n-GaN barrier layer. Two electron traps and one hole trap were observed in the p-GaN layer. They are located at E-C - 0.60 eV, E-C - 0.79 eV and E-V + 0.70 eV. The total trap density in both the n-GaN barrier layer and the p-GaN layer of the LED is in order of 10(14) cm(-3), which is comparable with that found in GaN epi-layer grown on sapphire. (C) 2016 The Japan Society of Applied Physics

Short TitleJpn. J. Appl. Phys.