|Title||Cracking behavior of evaporated amorphous silicon films|
|Publication Type||Journal Article|
|Year of Publication||2010|
|Authors||Kim, J, Inns, D, Sadana, DK|
|Journal||Thin Solid Films|
|Pagination||4908 - 4910|
The residual stress in amorphous silicon films deposited by evaporation is investigated with different substrate temperatures. The stress measured from all the films studied in this paper is tensile. The level of stress decreases from 580 MPa to 120 MPa with increasing substrate temperature from 60 degrees C to 350 degrees C. When the film becomes thicker, strain increases and cracks are formed for stress relaxation.