|Title||Conetronics in 2D metal-organic frameworks: double/half Dirac cones and quantum anomalous Hall effect|
|Publication Type||Journal Article|
|Year of Publication||2017|
|Authors||Wu, M, Wang, Z, Liu, J, Li, W, Fu, H, Sun, L, Liu, X, Pan, M, Weng, H, Dinca, M, Fu, L, Li, J|
|Keywords||2D metal-organic frameworks, ab-initio, complexes, cone selecting/filtering, cu, double/half Dirac cones, fermions, first-principles calculations, graphene, nanosheet, ni, quantum anomalous Hall effect, topological insulator|
Bandstructure with Dirac cones gives rise to massless Dirac fermions with rich physics, and here we predict rich cone properties in M3C12S12 and M3C12O12, where M = Zn, Cd, Hg, Be, or Mg based on recently synthesized Ni3C12S12-class 2D metal-organic frameworks (MOFs). For M3C12S12, their band structures exhibit double Dirac cones with different Fermi velocities that are n (electron) and p (hole) type, respectively, which are switchable by few-percent strain. The crossing of two cones are symmetry-protected to be non-hybridizing, leading to two independent channels at the same k-point akin to spin-channels in spintronics, rendering 'conetronics' device possible. For M3C12O12, together with conjugated metal-tricatecholate polymers M-3(HHTP)(2), the spin-polarized slow Dirac cone center is pinned precisely at the Fermi level, making the systems conducting in only one spin/cone channel. Quantum anomalous Hall effect can arise in MOFs with non-negligible spin-orbit coupling like Cu3C12O12. Compounds of M3C12S12 and M3C12O12 with different M, can be used to build spin/cone-selecting heterostructure devices tunable by strain or electrostatic gating, suggesting their potential applications in spintroincs/conetronics.
|Short Title||2D Mater.|