|Title||Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells|
|Publication Type||Journal Article|
|Year of Publication||2015|
|Authors||Park, HHejin, Heasley, R, Sun, L, Steinmann, V, Jaramillo, R, Hartman, K, Chakraborty, R, Sinsermsuksakul, P, Chua, D, Buonassisi, T, Gordon, RG|
|Journal||Progress in Photovoltaics|
|Pagination||901 - 908|
Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved. Copyright (c) 2014 John Wiley & Sons, Ltd.