|Title||> 10(20) cm(-3) n-doping in Ge by Sb/P Co-implants: n(+)/p Diodes with Improved Rectification|
|Publication Type||Book Chapter|
|Year of Publication||2010|
|Authors||Kim, J, Bedell, SW, Sadana, DK|
|Editor||Harame, D, Ostling, M, Masini, G, Krishnamohan, T, Bedell, S, Reznicek, A, Boquet, J, Yeo, YC, Caymax, M, Tillack, B, Miyazaki, S, Koester, S|
|Book Title||Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices|
|Pagination||201 - 204|
One of the greatest challenges for fabricating a Ge channel n-MOSFET is to achieve high n-type dopant activation within the source and drain regions. Currently, p(+) doping greater than 10(20) cm(-3) can be routinely achieved which is close to the theoretical solid solubility limit of B in Ge. However, typical n(+) doping of Ge is limited to less than 5x10(19) which is far below the solid solubility limit of P in Ge. This work is aimed at achieving n(+) doping of greater than 10(20) cm(-3) in Ge. In this paper, we describe a Sb and P co-implantation process to enhance n(+) activation in Ge. N-carrier concentration more than 1.0x10(20)/cm(3) has been demonstrated by this method. Furthermore, higher forward bias current in Ge n(+)/p junction diode is obtained from n(+) formation by Sb and P co-implantion, as a consequence of the high n-type dopant activation in Ge.