|Title||Improvement of minority-carrier lifetime in tin monosulfide via substrate engineering|
|Publication Type||Book Chapter|
|Year of Publication||2016|
|Authors||Chakraborty, R, Steinmann, V, Hempel, M, Rekemeyer, P, Ofori-Okai, BK, Hartman, K, Youssef, A, Akey, A, Nelson, KA, Gradecak, S, Kong, J, Buonassisi, T|
|Book Title||2016 Ieee 43rd Photovoltaic Specialists Conference (pvsc)|
|Pagination||415 - 418|
Tin (II) monosulfide (SnS) is a promising Earth-abundant, non-toxic thin-film absorber due to its near-ideal optoelectronic properties and manufacturability, but low minority-carrier lifetimes limit SnS device efficiencies to below 5%. We employ electron beam-induced current measurements to deduce the effect of structural defects on bulk recombination in our champion thermally evaporated devices, and then use graphene substrates as a means to reduce detrimental structural defects. We demonstrate an improvement in the effective minority-carrier lifetime of SnS using a graphene substrate, suggesting that the use of substrates with van der Waals surface termination may provide a route toward higher-efficiency SnS-based devices.