|Title||Effect of annealing ambient on anisotropic retraction of film edges during solid-state dewetting of thin single crystal films|
|Publication Type||Journal Article|
|Year of Publication||2016|
|Authors||Kim, GHyun, Ma, W, Yildiz, B, Thompson, CV|
|Journal||Journal of Applied Physics|
|Keywords||adsorption, agglomeration, growth, mechanisms, ni(110), nickel, si, silicon-on-insulator, surface self-diffusion, temperature|
During solid-state dewetting of thin single crystal films, film edges retract at a rate that is strongly dependent on their crystallographic orientations. Edges with kinetically stable in-plane orientations remain straight as they retract, while those with other in-plane orientations develop in-plane facets as they retract. Kinetically stable edges have retraction rates that are lower than edges with other orientations and thus determine the shape of the natural holes that form during solid-state dewetting. In this paper, measurements of the retraction rates of kinetically stable edges for single crystal (110) and (100) Ni films on MgO are presented. Relative retraction rates of kinetically stable edges with different crystallographic orientations are observed to change under different annealing conditions, and this accordingly changes the initial shapes of growing holes. The surfaces of (110) and (100) films were also characterized using low energy electron diffraction, and different surface reconstructions were observed under different ambient conditions. The observed surface structures were found to correlate with the observed changes in the relative retraction rates of the kinetically stable edges. Published by AIP Publishing.
|Short Title||J. Appl. Phys.|