Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

TitleRole of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
Publication TypeJournal Article
Year of Publication2016
AuthorsSyaranamual, GJ, Sasangka, WA, Made, RI, Arulkumaran, S, Ng, GI, Foo, SC, Gan, CL, Thompson, CV
JournalMicroelectronics Reliability
Volume64
Pagination589 - 593
Date PublishedJan-09-2016
ISSN00262714
URLhttp://linkinghub.elsevier.com/retrieve/pii/S0026271416301548http://api.elsevier.com/content/article/PII:S0026271416301548?httpAccept=text/plainhttp://api.elsevier.com/content/article/PII:S0026271416301548?httpAccept=text/xml
DOI10.1016/j.microrel.2016.07.012
Short TitleMicroelectronics Reliability