Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

TitleThreading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing
Publication TypeJournal Article
Year of Publication2016
AuthorsSasangka, WA, Syaranamual, GJ, Made, RI, Thompson, CV, Gan, CL
JournalAIP Advances
Volume6257
Issue9
Pagination095102
Date PublishedJan-09-2016
URLhttp://aip.scitation.org/doi/10.1063/1.4962544http://aip.scitation.org/doi/pdf/10.1063/1.4962544
DOI10.1063/1.4962544
Short TitleAIP Advances