Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

TitleWork function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate
Publication TypeJournal Article
Year of Publication2006
AuthorsYu, HP, Pey, KL, Choi, WK, Antoniadis, DA, Fitzgerald, EA, Chi, DZ, Tung, CH
JournalApplied Physics Letters
Volume89
Issue23
Date Published2006/12/04/
ISBN Number0003-6951