Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

TitleComparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors
Publication TypeJournal Article
Year of Publication2011
AuthorsOng, BS, Pey, KL, Ong, CY, Tan, CS, Antoniadis, DA, Fitzgerald, EA
JournalApplied Physics Letters
Volume98
Issue18
Date Published2011/05/02/
ISBN Number0003-6951