InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

TitleInGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer
Publication TypeJournal Article
Year of Publication2008
AuthorsLew, KL, Yoon, SF, Tanoto, H, Chen, KP, Dohrman, CL, Isaacson, DM, Fitzgerald, EA
JournalElectronics Letters
Volume44
Issue3
Pagination243 - U25
Date Published2008/01/31/
ISBN Number0013-5194