New observations of semiconductor properties

May 23, 2013

A significant controversy surrounds the reason for the high-intensity light output from a leading LED semiconductor material, indium gallium nitride (InGaN): Researchers have been split on whether or not indium-rich clusters form within the material and provide the LED’s remarkable efficiency. Now, researchers from MIT and Brookhaven National Laboratory have demonstrated definitively that clustering is not the cause. The results, published online in Applied Physics Letters, advance fundamental understanding of LED technology and could open new research pathways. See the MIT News Office for further details.



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